T. Seiler, M. Jüttner, T. Herrmann, A. Zaka, L. Pirro, J. Hoentschel, W. Klix, R. Stenzel
Investigation of advanced FDSOI CMOS devices for analog/mixed signal applications
EUROSOIULIS2019, P. 27, Grenoble, France, April 01-03 2019.
M. Weigel, R. Stenzel, W. Klix, R. Hentschel, A. Wachowiak, T.Mikolajick:
Influence of ionization modelling for Mg-doped GaN on transfer and breakdown characteristics of vertical GaN-MOSFET
Proc. of 40th Workshop on Compound Semiconductor Devices and Integrated Circuits, Aveiro, Portugal 2016, pp. W27-W28
M. Weigel, W. Klix, R. Stenzel, R. Hentschel, A. Wachowiak, T. Mikolajick:
Investigation of vertical GaN-MOSFET breakdown effects by device simulation.
Proc. of 39thWorkshop on Compound Semiconductor Devices and Integrated Circuits, Smolenice Castle, Slovakia 2015, pp. 45-46
T. Baldauf, R. Stenzel, W. Klix, A. Wei, R. Illgen, S. Flachowsky, T. Herrmann, J. Hoentschel, M. Horstmann:
Strained isolation oxide as novel overall stress element for Tri-Gate transistors of 22nm CMOS and beyond.
IEEE Int. Semiconductor Conference Dresden - Grenoble 2012 (ISCDG), Proceedings, Session B.2
T. Baldauf, A. Wei, R. Illgen, S. Flachowsky, T. Herrmann, J. Höntschel, M. Horstmann, W. Klix and R. Stenzel:
Study of 22/20nm tri-gate transistors compatible in a low-cost hybrid FinFET/planar CMOS process.
International Semiconductor Device Research Symposium 2011, Maryland, Proceedings, , Paper WP 11-09-04
T. Baldauf, A. Wei, T. Herrmann, S. Flachowsky, R. Illgen, J. Höntschel, M. Horstmann, W. Klix and R. Stenzel:
Suppression of the corner effects in a 22 nm hybrid tri-gate/planar process.
IEEE Int. Semiconductor Conference Dresden 2011, Proceedings, Paper 1.24
T. Baldauf, A. Wei, R. Illgen, S. Flachowsky, T. Herrmann, T. Feudel, J. Höntschel, M. Horstmann, W. Klix, R. Stenzel:
Simulation and optimization of tri-gates in a 22 nm hybrid tri-gate/planar process.
12th International Conference on Ultimate Integration on Silicon, ULIS 2011, Cork, Proceedings, pp.3 - 6
S. Flachowsky, A. Wei, R. Illgen, T. Herrmann, J. Höntschel, M. Horstmann, W. Klix, R. Stenzel:
Understanding strain-induced drive-current enhancement in strained-silicon n-MOSFET and p-MOSFET.
IEEE Trans. on Electron Devices, Vol.57 (2010), No. 6, pp. 1343-1354
S. Flachowsky, R. Illgen, T. Herrmann, T. Baldauf, A. Wei, J. Höntschel, W. Klix, R. Stenzel, M. Horstmann:
Stress memorization technique for n-MOSFETs: Where is the stress?
11th International Conference on Ultimate Integration of Silicon (ULIS), Glasgow 2010, Scotland, Proceedings, pp. 149-152
S. Flachowsky, R. Illgen, T. Herrmann, A. Wei, J. Höntschel, M. Horstmann, W. Klix, R. Stenzel:
Strain engineering for performance enhancement in advanced nano scaled SOI-MOSFETs.
7th International Nanotechnology Symposium, Nanofair 2009, Dresden, Germany, Proceedings
R. Illgen, S. Flachowsky, T. Herrmann, T. Feudel, J. Höntschel, M. Horstmann, W. Klix, R. Stenzel:
Novel ultrafast annealing processes for performance improvement in advanced nano scaled partially depleted SOI-MOSFETs.
7th International Nanotechnology Symposium, Nanofair 2009, Dresden, Germany, Proceedings
T. Herrmann, S. Flachowsky, R. Illgen, W. Klix, R. Stenzel, J. Höntschel, T. Feudel, M. Horstmann:
Simulation of asymmetric doped high performance SOI MOSFETs for VLSI CMOS technologies.
Int. Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, Napa, Californien, 2009, Proceedings, pp. 332-338
S. Flachowsky, R. Illgen, T. Herrmann, W. Klix, R. Stenzel, I. Ostermay, A. Wei, J. Höntschel, M. Horstmann:
Detailed simulation study of embedded SiGe and Si:C S/D stressors in nano scaled SOI MOSFETs.
Int. Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, Napa, Californien, 2009, Proceedings, pp. 142-150
R. Illgen, S. Flachowsky, T. Herrmann, W. Klix, R. Stenzel, T. Feudel, J. Höntschel, M. Horstmann:
Effect of source/drain extension dopant species on device performance of non-diffuse embedded SiGe strained SOI P-MOSFETs.
Int. Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, Napa, Californien, 2009, Proceedings, pp. 261-267
S. Flachowsky, J. Höntschel, A. Wei, R. Illgen, P. Hermann, T. Herrmann, W. Klix, R. Stenzel, A. Ramirez, M. Horstmann, N. Kernevez, I. Cayrefourcq,
F. Metral, M. Kennard, and E. Guiot:
Scalability of advanced partially depleted n-MOSFET devices on biaxial strained SOI substrates.
10th International Conference on Ultimate Integration of Silicon (ULIS), Aachen 2009, Germany, Proceedings, 165
R. Illgen, S. Flachowsky, T. Herrmann, T. Feudel, D. Thron, B. Bayha, W. Klix, M. Horstmann and R. Stenzel:
A Comparative study of non-melt laser spike annealing and flash lamp annealing in terms of transistor performance and pattern effects on SOI-CMOSFETs for the 32 nm node and below.
10th International Conference on Ultimate Integration of Silicon (ULIS), Aachen 2009, Germany, Proceedings, 161
J. Hoentschel, A. Wei, M. Wiatr, A. Gehring, T. Scheiper, R. Mulfinger, T. Feudel, T. Lingner, A. Poock, S. Muehle, C. Krueger,
T. Herrmann, W. Klix, R. Stenzel, R. Stephan, P. Huebler, T. Kammler, P. Shi, M. Raab, D. Greenlaw and M. Horstmann:
Implementation and optimization of asymmetric transistors in advanced SOI CMOS technologies for high performance microprocessors.
IEDM 2008, Technical Digest, pp. 649-652
T. Herrmann, S. Flachowsky, R. Illgen, W. Klix, R. Stenzel, J. Höntschel, M. Horstmann und A. Wei:
Entwurf und Optimierung von nanoelektronischen Halbleiterbauelementen unter Nutzung der Prozess- und Bauelementesimulation.
Festschrift anlässlich des 10. Jahrestages der Gründung des ZAFT e.V. an der HTW Dresden, 2008, S. 96-103
R.M. Meixner, H.H. Göbel, H. Qiu, C. Ucurum, W. Klix, R. Stenzel, F.A. Yildirim, W. Bauhofer, W.H. Krautschneider:
A physical-based PSPICE compact model for poly(3-hexylthiophene) organic field-effect transistors.
IEEE Trans. on Electron Devices, Vol.55 (2008), No. 7, pp. 1776-1781
S. Flachowsky, A. Wei, T. Herrmann, R. Illgen, M. Horstmann, R. Richter, H. Salz, W. Klix, R. Stenzel:
Gate-length scaling trends of drive current enhancement in CMOSFETs with dual stress overlayers and embedded-SiGe.
EMRS 2008 Spring Meeting, Strasbourg, France 2008, Materials Science and Engineering B 154–155 (2008), pp. 98–101
R. Illgen, T. Feudel, T. Herrmann, S. Flachowsky, R. Stenzel, M. Horstmann, L. Herrmann, N.-W. Hauptmann, W. Klix:
Impact of solid phase epitaxial regrowth on device performance for non-diffusive flash-annealed 45nm SOI-MOSFETs.
International Semiconductor Device Research Symposium (ISDRS 2007), University of Maryland, USA, Proceedings, TA2-02
T. Herrmann, W. Klix, R. Stenzel, S. Duenkel, R. Illgen, J. Hoentschel,T. Feudel, M. Horstmann:
Line edge and gate interface roughness simulations of advanced VLSI SOI-MOSFETs.
in "Simulation of Semiconductor Processes and Devices 2007 ", eds. by T. Grasser and S. Selberherr, Springer-Verlag, 2007, pp. 101-104
R. Stenzel, W. Klix, T. Herrmann, S. Dünkel, R. Illgen:
Optimization of nano-scaled implantation free InGaAs MOSFETs.
Proc. of 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, Venedig, 2007, pp. 179-182
R. Illgen, R. Stenzel, W. Klix, T. Herrmann, S. Dünkel, M. Horstmann, R. van Bentum, T. Feudel, M. Gerhardt, M. Herden:
Verbesserte Dotandenaktivierung für Hochgeschwindigkeits-Logiktransistoren durch neuartige thermische Ausheilprozesse.
8. Nachwuchswissenschaftlerkonferenz, FH Jena 2007, Tagungsband, S. 206-207
S. Dünkel, R. Stenzel, W. Klix, T. Herrmann, R. Illgen, M. Horstmann, R. van Bentum, A. Wei, T. Kammler, B. Trui:
Verspanntes Silizium zur Erhöhung der LadungstrÄgerbeweglichkeit in MOSFETs mit Gatelängen kleiner 50nm.
8. Nachwuchswissenschaftlerkonferenz, FH Jena 2007, Tagungsband, S. 208-209
T. Herrmann, S. Dünkel, R. Illgen, W. Klix, R. Stenzel, T. Feudel, J. Höntschel, M. Horstmann:
Prozess- und Bauelementesimulation zur Optimierung von Halbleiterbauelementen für Mikroprozessoren.
Berichte und Informationen, HTW-Dresden, 2/2006, S. 15-20
T. Herrmann, W. Klix, R. Stenzel, T. Feudel, J. Hoentschel, M. Horstmann:
Capacitive gate insulatior thickness and its impact on static and dynamic behavior of scaled PD-SOI-MOSFET.
Int. Semiconductor Conf. CAS 2006, Sinaia, Romania, Proceedings, pp. 345-348
T. Herrmann, T. Feudel, J. Hoentschel, M. Horstmann, W. Klix, R. Stenzel:
Rigorous determination of CMOS inverter propagation delay by TCAD.
IEEE EDS Workshop on Advanced Electron Devices, Duisburg, Germany 2006, Abstracts
R. Stenzel, L. Müller, T. Herrmann, W. Klix:
Numerical simulation of nanoscale double-gate MOSFETs.
5th Int. Conf. on Advanced Engineering Design, Prag, 2006, Proceedings, E2.05
Acta Polytechnica, Vol. 46, No.5/2006, pp. 35-39
W. Klix, R. Stenzel, T. Herrmann, E. Mehler:
Numerical simulation of organic field-effect-transistors.
11th Int. Workshop on Computational Electronics, Wien, 2006, Book of Abstracts, pp. 159-160
T. Herrmann, W. Klix, R. Stenzel,T. Feudel, M. Horstmann, J. Höntschel:
Optimization of high performance nano scaled SOI-MOSFETs by process and device simulation.
Nanofair 2005, VDI-Berichte 1920, pp. 159-162
H. Qiu, R. Meixner, H. Goebel, W. Klix, R. Stenzel:
A simple method to simulate polymer field-effect transistors.
5th International IEEE Conference on Adhesives and Polymers, Polytronic 2005, Wroclaw, Poland, Proceedings, pp. 189-191
W. Klix, R. Stenzel, T. Herrmann:
Numerical simulation of small silicon partially insulated MOSFETs.
Proc. of 15th Workshop on Modelling and Simulation of Electron Devices, Pisa, Italy, 2005. pp. 67-68
J. Comput. Electron. (2006), No.5, p.251-254
T. Herrmann, T. Feudel, M. Horstmann, J. Höntschel, L. Herrmann, M. Herden, W. Klix, R. Stenzel:
Novel approaches to improve laser annealed SOI-MOSFETs.
EMRS 2005 Spring Meeting, Strasbourg, France 2005, Materials Science and Engineering B 124-125 (2005), pp. 223-227
R. Stenzel, W. Klix, J. Höntschel:
Numerical simulation of nanoscale semiconductor devices.
XXVI. Sesist Katedry Theoreticke Elektrotechniky, TU Ostrava, CEZ, 2004, pp. 63-67
J. Höntschel, W. Klix, R. Stenzel, F. Ertl, G. Abstreiter:
Design and optimization of vertical CEO-T-FETs with atomically precise ultrashort gates by simulation with quantum transport models.
27th Int. Conf. on Physics of Semiconductors, Flagstaff, Arizona, USA, 2004, AIP Conference Proceedings, Volume 772, Part B, pp. 1501-1502
J. Höntschel, R. Stenzel, W. Klix:
Simulation of quantum transport in monolithic ICs based on In0.53Ga0.47As-In0.52Al0.48As RTDs and HEMTs with a quantum hydrodynamic transport model.
IEEE Trans. on Electron Devices, Vol.51 (2004), No. 5, pp. 684-692
J. Höntschel, W. Klix, R. Stenzel:
Design and optimization of complex nanoscale electron devices by simulations with quantum transport models.
Nanofair 2003, VDI-Berichte 1803, pp. 93-97
R. Stenzel, J. Höntschel, W. Klix:
Simulation of ultra-short channel HEMTs with different gate concepts by 2D/3D-hydrodynamic models.
Proc. of 14th Workshop on Modelling and Simulation of Electron Devices (MSED2003), Barcelona, Spain, 2003, pp. 33-36
J. Höntschel, W. Klix, R. Stenzel:
Investigation of quantum effects in monolithic integrated circuits of resonant tunneling structures and high electron mobiolity transistors based on In0.53Ga0.47As/In0.52Al0.48As/InP by simulations with a new quantum hydrodynamic transport model.
Proc. of Int. Symp. on Compound Semiconducturs (ISCS), San Diego 2003, pp. 229-230
R. Dietrich, A. Wieszt, A. Vescan, H. Leier, R. Stenzel, W. Klix:
Power handling limits and degradations of large area AlGaN/GaN RF-HEMTs.
Solid-State Electronics, 47(2003), No. 1 pp. 123-125
J. Höntschel, R. Stenzel, W. Klix:
Investigations of quantum transport phenomena in resonant tunneling structures by simulation with a novel quantum hydrodynamic transport model.
29th Int. Symp. on Compound Semiconducturs (ISCS), Lausanne 2002, IoP Conf. Series No. 174, pp. 255-258
J. Höntschel, R. Stenzel, W. Klix, C. Wölk, V. Ziegler, C. Gässler, R. Deufel und F.J. Berlec:
Simulation und Optimierung von In0.53Ga0.47As/In0.52Al0.48As/InP-High-Electron-Mobility-Transistoren.
Berichte und Informationen, HTW-Dresden, 2/2002, S. 143 - 151
J. Höntschel, R. Stenzel, W. Klix, A.D. Wieck:
Simulation of line-doping-HEMTs by a coupled solution of the Schrödinger equation with a macroscopic transport model.
Proc. of XXVI Workshop on Compound Semiconductor Devices and Integrated Circuits, Chernogolovka 2002, pp. 75-76
R. Stenzel, J. Höntschel, W. Klix, A. Wieszt, R. Behtash, H. Leier:
RF-behavior optimization of GaN-based HFETs by coupled electrical-thermal simulation.
Proc. of 13th Workshop on Physical Simulation of Semiconductor Devices, Ilkley, UK, 2002
J. Höntschel, R. Stenzel, W. Klix, F. Ertel, T. Asperger, R.A. Deutschmann, M. Bichler, G. Abstreiter:
Simulation of vertical CEO_FETs by a coupled solution of the Schrödinger equation with a hydrodynamic transport model.
in "Simulation of Semiconductor Processes and Devices 2001 ", eds. by D. Tsoukalas and C. Tsamis, Springer-Verlag, 2001, pp. 222-225
R. Dietrich, A. Wieszt, A. Vescan, H. Leier, R. Stenzel, W. Klix:
Power handling limits of AlGaN/GaN large-scale RF-HEMTs.
4. Int. Conf. on Nitride Semiconductors (ICNS-4), Denver 2001, Abstract Book, p. 95
J. Höntschel, R. Stenzel, W. Klix, C. Wölk, V. Ziegler, C. Gässler:
Simulation of ultra short channel InAlAs/InGaAs/InP high electron mobility transistors by a coupled solution of the Schrödinger equation with a hydrodynamic transport model.
Proc. of XXV Workshop on Compound Semiconductor Devices and Integrated Circuits, Sardinia 2001, pp. 53-54
K.-H. Rooch, A. Lerch, R. Stenzel, W. Klix:
An approach for small-signal models for RF on CMOS application with consideration of substrate influence.
Proc. of 2001 IEEJ Int. Analog VLSI Workshop, Bangkok 2001, pp. 107-111
R. Stenzel, A. Lerch, W. Klix, K.-H. Rooch:
Simulation and optimization of CMOS-transistors for RF-applications.
Proc. of 11th Conf. on Microwaves, Radio Communications and Electromagnetic Compatibility - MIOP, Stuttgart 2001, pp. 268-272
R. Stenzel, W. Klix:
SIMBA ein universeller 3D-Bauelementesimulator.
Berichte und Informationen, HTW-Dresden, 2/1999,1/2000, S. 51 - 56
R. Stenzel, W. Klix, A. Vescan, R. Dietrich, A. Wieszt, H. Leier:
Investigation of hysteresis effects in device characteristics of AlGaN/GaN-HFETs caused by polarization charges.
4. European GaN Workshop, Nottingham 2000, Abstract book, p. 13C
R. Stenzel, C. Pigorsch, W. Klix, A. Vescan, H. Leier:
Simulation of AlGaN/GaN-HFETs including spontaneous and piezoelectric polarisation charges.
Proc. 26th Int. Symp. on Compound Semiconducturs, Berlin 1999
R. Stenzel, C. Pigorsch, W. Klix, R. Schüffny:
Simulation von Nanobauelementen.
Proc. Dresdner Arbeitstagung Schaltungs- und Systementwurf (DASS'99), Fraunhofer Institut für Integrierte Schaltungen, Dresden 1999
R. Stenzel, C. Pigorsch, W. Klix, H. Leier, H. Blanck:
Numerical simulation of ballast resistor behavior in HBTs.
Proc. of 11th III-V Semiconductor Device Simulation Workshop, IEMN, Lille 1999
C. Pigorsch, W. Klix, R. Stenzel:
Quantum wire splitting in nanostructures.
Microelectronic Engineering, 43-44 (1998), pp. 325-333
W. Klix, R. Stenzel, C. Pigorsch:
Hydrodynamische Simulation des innerelektronischen Verhaltens moderner Halbleiterbauelemente.
43. Int. Wiss. Kolloquium, TU Ilmenau 1998, Vortragsreihen Band 2, S. 349-354
R. Stenzel, C. Pigorsch, W. Klix:
Simulation von Nanobauelementen. PTB-Bericht F-31, Physikalisch-Technische Bundesanstalt Braunschweig, 1998, S. 56-65
W. Klix, A. Reibiger, R. Stenzel, C. Pigorsch:
Dreidimensionale Simulation des innerelektronischen Verhaltens moderner Halbleiterbauelemente.
Wiss. Zeitschrift TU Dresden, 47 (1998), H. 2, S. 68-73
R. Stenzel, J. Würfl, E. Richter, C. Pigorsch, W. Klix:
Simulation of influence of heat removal on power gains of heterojunction bipolar transistors.
Proc. of 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits, Zeuthen 1998, pp. 53-54
R. Stenzel, C. Pigorsch, W. Klix:
Quasi three-dimensional simulation of quantum devices.
Proc. of 10th III-V Semiconductor Device Simulation Workshop, I.S.I., Turin 1997
C. Pigorsch, W. Wegscheider, W. Klix, R. Stenzel:
3D-Simulation of novel quantum wire transistors.
Proc. of Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors, Berlin 1997, physica status solidi (b), Vol.204, N.1, pp. 346-349
C. Pigorsch, W. Klix, R. Stenzel:
Quantum wire splitting in nanostructures.
2. Int. Conf. on Low Dimensional Structures & Devices, Portugal 1997, Reference Manual, p.25
R. Stenzel:
Physik der elektromagnetischen Felder.
2. Wiss. Symposium des FB Elektrotechnik der HTW Dresden, Nov. 1995,
in Berichte und Informationen, Hochschule für Technik und Wirtschaft Dresden, H. 1 (1996), S. 8-13
R. Stenzel, C. Pigorsch, W. Klix:
HFET-Simulation by SIMBA.
Proc. of 9th Semiconductor Device Simulation Workshop, Heeze, The Netherlands, 1996
C. Pigorsch, R. Stenzel, W. Klix:
Coupled microscopic/macroscopic simulation of III-V heterojunction devices.
Proc. of 9th Semiconductor Device Simulation Workshop, Heeze, The Netherlands, 1996
F. Schnieder, R. Doerner, W. Klix, R. Dittmann, R. Stenzel:
Temperature dependence of the GaAs MESFET equivalent circuit elements.
Proc. of 9th Semiconductor Device Simulation Workshop, Heeze, The Netherlands, 1996
R. Dittmann, T. Graetz, W. Klix, R. Stenzel:
Simulation von Halbleiterbauelementen unter nichtisothermen Bedingungen.
40. Int. Wiss. Kolloquium, TU Ilmenau 1995, Vortragsreihen Band 3, S. 485-488
C. Pigorsch, R. Stenzel, W. Klix:
Gemischte mikroskopisch/makroskopische Simulation für nanoelektronische Bauelemente.
40. Int. Wiss. Kolloquium, TU Ilmenau 1995, Vortragsreihen Band 3, S. 357-362
R. Stenzel, C. Pigorsch, W. Klix:
Numerische Simulation von Halbleiterbauelementen.
Berichte und Informationen aus Forschung, Lehre und Praxis, Hochschule für Technik und Wirtschaft Dresden, H. 1 (1995), S. 65-70
C. Pigorsch, R. Stenzel, W. Klix:
Coupled 2D-microscopic/macroscopic simulation of nanoelectronic heterojunction devices.
in "Simulation of Semiconductor Devices and Processes", eds. by H. Ryssel and P. Pichler, Vol. 6, Springer-Verlag, 1995, pp. 230-233
R. Stenzel, W. Klix, R. Dittmann, C. Pigorsch, F. Schnieder:
Numerical simulation of III/V-semiconductor devices with SIMBA.
Proc. of 8th GaAs Simulation Workshop, Duisburg 1994, pp. 1-35
R. Stenzel, W. Klix, R. Dittmann, C. Pigorsch, U. Meiners, H. Brugger:
Device simulation of novel in-plane-gated field-effect transistors.
Jpn. J. Appl. Phys., 33(1994), pp. 1243-1247
W. Klix, R. Dittmann, R. Stenzel:
Three-dimensional simulation of semiconductor devices.
Lecture Notes in Computer Science 796, Springer-Verlag, 1994, pp. 99-104
R. Stenzel, W. Klix:
Dynamic simulation of semiconductor devices.
Proc. of 2nd Int. Workshop on Discrete Time Domain Modelling of Electromagnetic Fields and Networks, Berlin 1993, pp. 199-216
R. Stenzel, H. Leier:
Heterobipolartransistoren - Simulation und experimentelle Ergebnisse.
GME-Fachtagung Mikroelektronik, Dresden 1993, GME-Fachbericht 11, VDE-Verlag, S. 259-264